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www.irf.com 1 11/18/09 IRF7351PBF hexfet power mosfet notes through are on page 10 so-8 benefits ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating applications synchronous rectifier mosfet for isolated dc-dc converters low power motor drive systems v dss r ds(on) max qg (typ.) 60v 17.8m ? @v gs = 10v 24nc absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain c urrent p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 c/w r ja junction-to-ambient ??? 62.5 -55 to + 150 2.0 0.016 1.28 max. 8.0 6.4 64 20 60 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 60 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.068 ??? v/c r ds(on) static drain-to-source on-resistance ??? 13.7 17.8 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v ? v gs(th) gate threshold voltage coefficient ??? -8.2 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 18 ??? ??? s q g total gate charge ??? 24 36 q gs1 pre-vth gate-to-source charge ??? 3.8 ??? q gs2 post-vth gate-to-source charge ??? 1.2 ??? nc q gd gate-to-drain charge ??? 7.2 ??? q godr gate charge overdrive ??? 11.8 ??? see fig. 17 q sw switch charge (q gs2 + q gd ) ??? 8.4 ??? q oss output charge ??? 7.5 ??? nc t d(on) turn-on delay time ??? 5.1 ??? t r rise time ??? 5.9 ??? ns t d(off) turn-off delay time ??? 17 ??? t f fall time ??? 6.7 ??? c iss input capacitance ??? 1330 ??? c oss output capacitance ??? 190 ??? pf c rss reverse transfer capacitance ??? 92 ??? avalanche characteristics parameter units e as si ng l e p u l se a va l anc h e e nergy mj i ar a va l anc h e c urrent a diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 1.8 (body diode) a i sm pulsed source current ??? ??? 64 (bod y diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 61 92 nc ??? i d = 6.4a v gs = 0v v ds = 30v v gs = 10v typ. ??? v ds = v gs , i d = 50a r g = 1.8 ? v ds = 25v, i d = 6.4a v ds = 60v, v gs = 0v, t j = 125c t j = 25c, i f = 6.4a, v dd = 30v di/dt = 300a/s t j = 25c, i s = 6.4a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 30v, v gs = 10v i d = 6.4a v ds = 30v v gs = 20v v gs = -20v v ds = 60v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 8.0a conditions max. 325 6.4 ? = 1.0mhz
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.8v 60s pulse width tj = 150c vgs top 10v 8.0v 6.0v 5.0v 4.5v 4.3v 4.0v bottom 3.8v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 6.0v 5.0v 4.5v 4.3v 4.0v bottom 3.8v 60s pulse width tj = 25c 3.8v 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 0.8 1.0 1.3 1.5 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.0a v gs = 10v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 6.4a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 8 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) ri (c/w) i (sec) 3.6777 0.009926 21.765 25.24029 25.683 3.723179 11.374 0.348001 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4
6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 12. on-resistance vs. gate voltage 0 5 10 15 20 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 8.0a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.53a 0.79a bottom 6.4a
www.irf.com 7 d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17a. gate charge test circuit fig 16.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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8 www.irf.com control fet

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#' p loss = p conduction + p switching + p drive + p output this can be expanded and approximated by; p loss = i rms 2 r ds(on ) () + i q gd i g v in f ? ? ? ? ? ? + i q gs 2 i g v in f
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synchronous fet the power loss equation for q2 is approximated by; p loss = p conduction + p drive + p output * p loss = i rms 2 r ds(on) () + q g v g f () + q oss 2 v in f ? ? ? ? ? + q rr v in f ( ) *dissipated primarily in q1. for the synchronous mosfet q2, r ds(on) is an im- portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. under light load the mosfet must still be turned on and off by the con- trol ic so the gate drive losses become much more significant. secondly, the output charge q oss and re- verse recovery charge q rr both generate losses that are transfered to q1 and increase the dissipation in that device. thirdly, gate charge will impact the mosfets? susceptibility to cdv/dt turn on. the drain of q2 is connected to the switching node of the converter and therefore sees transitions be- tween ground and v in . as q1 turns on and off there is a rate of change of drain voltage dv/dt which is ca- pacitively coupled to the gate of q2 and can induce a voltage spike on the gate that is sufficient to turn the mosfet on, resulting in shoot-through current . the ratio of q gd /q gs1 must be minimized to reduce the potential for cdv/dt turn on. power mosfet selection for non-isolated dc/dc converters figure a: q oss characteristic
www.irf.com 9 so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at http://www.irf.com/package/
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 16mh r g = 25 ? , i as = 6.4a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board.
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data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/09 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel

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